IXGH 25N90A IGBT Transistor N-Kanal 900V 50A 200W TO247AD  IGBT N-Kanal Transistor 600V 23A 100W TO220AB IBGT = Isulated Gate Bipolar Transistor = MOSIGBT  VCES = Collector-to-Emitter Voltage = 900V  IC 25°C = Continuous Collector Current = 50A  IC 90°C = Continuous Collector Current = 25A  ICM = Pulsed Collector Current 100A  VCE sat = 3,5V  VGE = Gate-to-Emitter Voltage +/-20V  PD 25°C = Maximum Power Dissipation 200W  TF = Current Fall Time = 1500ns  Pinlayout siehe weitere Bilder 

IXGH40N60A IGBT Transistor N-Kanal 600V 75A 250W TO247AD IGBT N-Kanal Transistor 600V 23A 100W TO220AB VCES = Collector-to-Emitter Voltage = 600V  IC 25°C = Continuous Collector Current = 75A  ICM = Pulsed Collector Current 150A  VCE sat = 3,0V  VGE = Gate-to-Emitter Voltage +/-20V  PD 25°C = Maximum Power Dissipation 250W  TD ON Inductive load = 100ns  TD Off = Turn-Off Delay Time typisch 600ns Pinlayout siehe weitere Bilder