IXGH 25N90A IGBT Transistor N-Kanal 900V 50A 200W TO247AD  IGBT N-Kanal Transistor 600V 23A 100W TO220AB IBGT = Isulated Gate Bipolar Transistor = MOSIGBT  VCES = Collector-to-Emitter Voltage = 900V  IC 25°C = Continuous Collector Current = 50A  IC 90°C = Continuous Collector Current = 25A  ICM = Pulsed Collector Current 100A  VCE sat = 3,5V  VGE = Gate-to-Emitter Voltage +/-20V  PD 25°C = Maximum Power Dissipation 200W  TF = Current Fall Time = 1500ns  Pinlayout siehe weitere Bilder